inchange semiconductor product specification silicon npn power transistors 2SD1763 description ? ? with to-220fa package ? high breakdown voltage v ceo ? complement to type 2sb1186 ? high transition frequency applications ? for low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 2 a i cm collector current-peak 3 a p c collector power dissipation t c =25 ?? 20 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220fa) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1763 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma , i b =0 120 v v (br)cbo collector-base breakdown voltage i c =50 | a , i e =0 120 v v (br)ebo emitter-base breakdown voltage i e =50 | a , i c =0 5 v v cesat collector-emitter saturation voltage i c =1a ;i b =0.1a 0.4 v v besat base-emitter saturation voltage i c =1a ;i b =0.1a 1.5 v i cbo collector cut-off current v cb =100v i e =0 1 | a i ebo emitter cut-off current v eb =4v; i c =0 1 | a h fe dc current gain i c =0.1a ; v ce =5v 100 320 f t transition frequency i e =-0.1a ; v ce =5v 80 mhz c ob output capacitance i e =0 ; v cb =10v ,f=1mhz 20 pf ? h fe classifications e f 100-200 160-320
inchange semiconductor product specification 3 silicon npn power transistors 2SD1763 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)
|
